? 2003 ixys all rights reserved 1 - 2 v rsm v rrm types v v 900 800 vuo 70-08no7 1300 1200 vuo 70-12no7 1500 1400 vuo 70-14no7 1700 1600 vuo 70-16no7 symbol conditions maximum ratings i dav t c = 100c, module 70 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 550 a v r = 0 t = 8.3 ms (60 hz), sine 600 a t vj = t vjm t = 10 ms (50 hz), sine 500 a v r = 0 t = 8.3 ms (60 hz), sine 550 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 1520 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 1520 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 1250 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 1250 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m5) 5 15 % nm (10-32 unf) 44 15 % lb.in. weight typ. 110 g i dav = 70 a v rrm = 800-1600 v symbol conditions characteristic values i r v r = v rrm ;t vj = 25c 0.5 ma v r = v rrm ;t vj = t vjm 10 ma v f i f = 150 a; t vj = 25c 1.7 v v t0 for power-loss calculations only 0.8 v r t 8m ? r thjc per diode; dc current 1.45 k/w per module 0.242 k/w r thjh per diode, dc current 1.9 k/w per module 0.317 k/w d s creeping distance on surface 16.1 mm d a creepage distance in air 7.5 mm a max. allowable acceleration 50 m/s 2 features package with copper base plate isolation voltage 3000 v~ planar passivated chips low forward voltage drop ?" fast-on power terminals applications supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors advantages easy to mount with two screws space and weight savings improved temperature and power cycling capability small and light weight dimensions in mm (1 mm = 0.0394") data according to iec 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. ixys reserves the right to change limits, test conditions and dimensions. vuo 70 three phase rectifier bridge 316 e d c b a
? 2003 ixys all rights reserved 2 - 2 vuo 70 1 1.5 0 5 10 15 20 25 30 i f v f a v t=150c t=25c 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] i(a) fsm tvj=45c tvj=150c 550 500 i ------ i fsm f(ov) 0v rrm 1/2 v rrm 1v rrm 60 40 20 0 25 50 75 100 125 150 175 200 10 0 10 5 11 0 11 5 12 0 12 5 13 0 13 5 14 0 14 5 15 0 tc c dc sin.180 rec.120 rec.60 rec.30 2.76 1.26 0.76 0.51 0.38 0.26 = rthca [k/w] ifavm [a] tamb [k] 0 50 100 150 [w] pvtot psd 41 50 100 150 200 0 20 40 60 80 dc sin.180 rec.120 rec.60 rec.30 t (c) c i dav [a] 0.01 0.1 1 10 1 2 3 k/w z th t[s] z thjk z thjc 2 4 6 1 0 tvj=45c tvj=150c t[ms] 1 10 10 10 2 3 4 as 2 316 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig. 3 i 2 dt versus time (1-10ms) per diode or thyristor fig. 4 power dissipation versus direct output current and ambient temperature fig.5 maximum forward current at case temperature fig. 6 transient thermal impedance per diode or thyristor, calculated
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